* High speed.
* High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit : mm.

Features
* High speed.
* High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of HVP process). <.

NPN Triple Diffused Planar Silicon Transistor

D2641

D2642

D2645

D2646

D2600M

D2601

D2601A

D2601B

D2601D

D2601E

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts